IRF630 MOSFET 200V 9A N Channel TO220
MPN: IRF630
The IRF630 MOSFET Transistor is an N-Channel 200V transistor supplied in TO220 packaging. This power MOSFET is designed using consolidated strip layout based mesh overlay process. This technology matches and improves the performance compared with standard parts. This transistor can be utilised for switching applications. For further technical specifications please refer to the attached datasheet.
- 200 Volt VDS
- RDS(on) 400 mOhm
- Gate Source Voltage 4V
- N Channel 200V
- Extremely high dv/dt capability
- Very low intrinsic capacitances
- Minimised gate charge
- MOSFET 200V 9A TO220
Specification
Back order lead time | 5 Days |
Continuous drain current | 9A |
Drain source on resistance | 400MΩ |
Drain source voltage | 200V |
Input capacitance | 700pF |
Maximum gate source voltage | 4V |
Maximum operating temperature | 150°C |
Mounting type | Through Hole |
Package | TO220 |
Power dissipation | 310W |
Type | N-Channel |