BDX33C 100V NPN Darlington Silicon Power Transistor
MPN: BDX33C
The BDX33C transistor is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic packaging. Intended for use in power linear and switching applications. For further technical specifications please refer to the attached datasheet.
Specification
Back order lead time | 5 Days |
Collector base voltage | 100V |
Collector current | 10A |
Collector emitter saturation voltage | 2.5V |
Collector emitter voltage | 100V |
Dc current gain | 750 |
Maximum operating temperature | 150°C |
Mounting type | Through Hole |
Package | TO220AB |
Power dissipation | 70W |
Type | NPN |