BDX33C 100V NPN Darlington Silicon Power Transistor
MPN: BDX33C
The BDX33C transistor is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic packaging. Intended for use in power linear and switching applications. For further technical specifications please refer to the attached datasheet.
Specification
Back Order Lead Time | 5 Days |
Collector Base Voltage | 100V |
Collector Current | 10A |
Collector Emitter Saturation Voltage | 2.5V |
Collector Emitter Voltage | 100V |
DC Current Gain | 750 |
Maximum Operating Temperature | 150°C |
Mounting Type | Through Hole |
Package | TO220AB |
Power Dissipation | 70W |
Type | NPN |